PHIMO: Compact Model for GAA

A compact model for the gate-all-around (GAA) technology is crucial for the next big wave of CMOS. For the nanosheet GAA, there are new requirements compared to those available models for FinFETs. For this purpose, PHIMO(PHysics Integrated Model)-series compact models are developed. One model, PHIMO-NS, following the classical physics-based modeling approach and archiving the research outputs of Peking University since 2007, integrating various homemade GAA-specific modules, is implemented in SPICE simulators by two EDA vendors. Another model, PHIMO-NN, utilizes the power of our latest fusion modeling technique by fusing device physics with neural networks, which is SPICE-compatible, coded with Verilog-A, and tested with Cadence Virtuoso. While PHIMO-NS is accessible upon requests to EDA vendors, a simplified PHIMO-NS with the fusion technique is also supportive for GAA designs. All the PHIMO models are parameterized with calibrated TCAD simulations.

PKP: PHIMO-enhanced Peking University Predictive PDK

At the center of the PDK is the PHIMO model. The PKP3 PDK is open source, containing technology files for Cadence Virtuoso, decks for design rule check, layout v.s. schematic, and parasitic extractions for the 3nm GAA technology node. Parameterized cells (PCell), a simple standard cell library, and SRAM cell designs are also included. A reminder is that the PDK is provided for academic and research, and the designs are not manufacturable in any foundry. For more details regarding the PHIMO and the PKP, please refer to the associated publications, the design rule manual, and other PDK documentation.